simple drive requirement small package outline surface mount device g d s sot? 23 (to?236ab) leshan radio company, ltd. s-lp2301lt1g maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds -20 v gs 8 i d -2.3 i dm -8 ta = 25 o c 0.9 ta = 75 o c 0.57 t j , t stg -55 to 150 o c r qjc junction-to-ambient thermal resistance (pcb mounted) 2) r qja 140 note: 1. repetitive rating: pulse width limited by the maximum junction temperation 2. 1-in 2 2oz cu pcb board 3. guaranteed by design; not subject to production testing continuous drain current gate-source voltage maximum power dissipation operating junction and storage temperature range o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current 1) 20v p-channel enhancement-mode mosfet v ds = -20v r ds(on), vgs@-4.5v, ids@-2.8a = 100 r ds(on), vgs@-2.5v, ids@-2.0a = 150 features advanced trench process technology high density cell design for ultra low on-resistance fully characterized avalanche voltage and current improved shoot-through fom 1 3 2 m m we declare that the material of product compliance with rohs requirements. device marking shipping 3000/tape & reel 10,000/tape & reel 01 lp2301lt1g lp2301lt3g 01 ordering information rev .o 1/5 1 2 3 lp2301lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lp2301lt1g s-lp2301lt3g
leshan radio company, ltd. lp2301lt1g , s-lp2301lt1g electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = -250ua -20 - - v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -2.8a 69 100 drain-source on-state resistance r ds(on) v gs = -2.5v, i d = -2.0a 83 150 m gate threshold voltage v gs(th) v ds =v gs , i d = -250ua -0.4 0 -0.9 0 v zero gate voltage drain current i dss v ds = -9.6v, v gs = 0v -1 ua gate body leakage i gss v gs = 8v, v ds = 0v 100 na gate resistance rg forward transconductance g fs v ds = -5v, i d = -4.0a 6.5 s dynamic 3) total gate charge q g 15.23 gate-source charge q gs 5.49 gate-drain charge q gd 2.74 turn-on delay time t d(on) 17.28 turn-on rise time t r 3.73 turn-off delay time t d(off) 36.05 turn-off fall time t f 6.19 input capacitance c iss 882.51 output capacitance c oss 145.54 reverse transfer capacitance c rss 97.26 source-drain diode max. diode forward current i s -2.4 a diode forward voltage v sd i s = -0.75a, v gs = 0v -0.8 -1.2 v note : pulse test: pulse width <= 300us, duty cycle<= 2% ns v ds = -6v, v gs = 0v f = 1.0 mhz pf v ds = -6v, i d = -2.8a v gs = -4.5v nc v dd = -6v, r l = 6 d = ?1, v gen = -4.5v r g = 6 m rev .o 2/5
leshan radio company, ltd. figure 1. transfer characteristics figure 2. onregion characteristics figure 3. onresistance versus drain current figure 4. on-resistance vs. gate-to-source voltage typical electrical characteristics 0 2 4 6 8 10 12 14 16 18 00 . 511 . 522 . 5 vgs, gate-to-source voltage(v) id drain current(a) vds=5v 25c 0 2 4 6 8 10 12 14 16 18 20 00.511.522.533.544.55 vds,drain-to-source voltage(v) id, drain current(a) 25c vgs=1.5v vgs=2v vgs=2.5v 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 012345678 id-drain current rds(on)-on-resistance() vgs=1.5v vgs=2v vgs=2.5v 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 02468 vgs-gate-to-source voltage(v) rds(on)-on-resistance() id=3.5a rev .o 3/5 lp2301lt1g , s-lp2301lt1g
leshan radio company, ltd. typical electrical characteristics figure 5. gate charge figure 6. capacitance figure 7. on-resistance vs.junction temperature 0 2 4 6 8 10 12 0 5 10 15 20 25 30 qgs(nc) vgs(v) 0 200 400 600 800 1000 1200 1400 1600 1800 01234567 vds capacitance ciss coss crss 0 20 40 60 80 100 120 -50 0 50 100 150 rds(on) (mr) 9*6 ??9,' ?$ figure 8. vth vs.junction temperature -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -50 0 50 100 150 temp( o c) vgs(th)(v) id=250ua temp( o c) rev .o 4/5 lp2301lt1g , s-lp2301lt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .o 5/5 lp2301lt1g , s-lp2301lt1g
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